IXZ631DF18N50

RF Power MOSFET & Driver

IXZ318N50 MOSFET and IXRFD631 Gate Driver Module

Figure 1

Functional diagram

Applications

• Class D or E switching generators

• Switch mode power supplies (SMPS)

• Pulse generators

• Transducer driver

Features

 Isolated substrate

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High isolation voltage (>2500 V)

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Excellent thermal transfer

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Increased temperature and power cycling capability

 IXYS advanced Z-MOS process for low parasitic capacitance

 Very low insertion inductance

 No Beryllium Oxide (BeO) or other hazardous materials

 Latch-up protected

 Low quiescent supply current

 RoHS compliant

Advantages

 Optimized for RF and high speed

 Easy to mount, no insulators needed

 High power density

 Single package reduces size and heat sink area

Description

The IXZ631DF18N50 is a CMOS high-speed, high-current gate driver and MOSFET combination module specifically

designed for Class D, E, HF, and RF applications at up to 27 MHz, as well as other applications. The IXZ631DF18N50

in pulse mode can provide 95 A of peak current while producing voltage rise and fall times of less than 5 ns, and

minimum pulse widths of 8 ns. The input of the driver is fully immune to latch-up over the entire operating range.

Designed with small internal delays, the IXZ631DF18N50 is suitable for higher power operation where combiners are

used. Its features and wide safety margin in operating voltage and power make the IXZ631DF18N50 unmatched in

performance and value.

The IXZ631DF18N50 is packaged in IXYSRF’s low-inductance RF package incorporating layout techniques to minimize

stray lead inductances for optimum switching performance. The IXZ631DF18N50 is a surface-mountable device.

500 V

18 A

0.3 Ω