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BU4525DW データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU4525DW データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BU4525DW DESCRIPTION · With TO-247 packaging · Large collector current · Low collector saturation voltage · High power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter · Driver of solenoid or motor · For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 14 A ICM Peak Collector Current 30 A IC Base Current 8 A PC Collector Power Dissipation@TC=75℃ 125 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ |
同様の部品番号 - BU4525DW |
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同様の説明 - BU4525DW |
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