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BUF420M データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUF420M データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BUF420M DESCRIPTION · With TO-3 packaging · Large collector current · Low collector saturation voltage · High power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter · Driver of solenoid or motor · For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Peak Collector Current 60 A IB Base Current 6 A PC Collector Power Dissipation 200 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ |
同様の部品番号 - BUF420M |
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同様の説明 - BUF420M |
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