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IRF3205STRLPBF データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF3205STRLPBF データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF3205STRLPBF · DESCRIPTION · Drain Current ID=110A@ TC=25℃ · Drain Source Voltage : VDSS= 55V(Min) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS . · Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 110 A IDM Pulse Drain Current 390 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.75 ℃ /W |
同様の部品番号 - IRF3205STRLPBF |
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同様の説明 - IRF3205STRLPBF |
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