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ARS5045 データシート(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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ARS5045 データシート(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  ARS5045 Taiwan Semiconductor 2 Version:C1707 THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance RӨJL 2.5 °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode (1) IF =50A, TJ = 25°C VF - 0.55 V Reverse current @ rated VR per diode (2) TJ = 25°C IR - 500 µA Junction capacitance 1 MHz, VR=4.0V CJ 2.7 - nF Reverse recovery time IF=0.5A , IR=1.0A IRR=0.25A trr 150 - ns Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PART NO. SUFFIX(*) PACKING CODE PACKAGE PACKING ARS5045 H B0 ARS 1,000 / Bulk packing *: Optional available EXAMPLE P/N EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE DESCRIPTION ARS5045HB0 ARS5045 H B0 AEC-Q101 qualified |
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