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STESD03-C データシート(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STESD03-C データシート(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page  STESD03-C Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente 02-Nov-2017 Rev. C Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage VRWM - - 3.3 V Maximum Reverse Leakage Current @VRWM IR - - 2.5 µA Breakdown Voltage @IT 2 VBR 5 - 5.9 V Test Current IT - - 1 mA Maximum Reverse Peak Pulse Current 3 IPP - - 9.8 A Clamping Voltage @IPP 3 VC - - 11.4 V Peak Power Dissipation (8X20µs) PPK - 102 - W Max. Capacitance @VR=0 and f=1MHz C - 80 - pF Notes: 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 3. CHARACTERISTICS CURVES |
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