UTV080 datasheet(1/2 Pages) GHZTECH

部品番号	UTV080

部品情報	8 Watts, 26.5 Volts, Class A UHF Television - Band IV & V

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メーカー	GHZTECH [GHz Technology]

ホームページ	http://www.microsemi.com/

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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE

THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

UTV080

8 Watts, 26.5 Volts, Class A

UHF Television - Band IV & V

GENERAL DESCRIPTION

CASE OUTLINE

The UTV 080 is a COMMON EMITTER transistor capable of providing 8

Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The

transistor includes double input prematching for full broadband capability.

Gold Metalization and Diffused Ballasting are used to provide high reliability

and supreme ruggedness.

55JV, STYLE 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

65 Watts

o

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

50 Volts

BVceo

Collector to Emitter Voltage

28 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

2.5 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Power Input

Vcc = 26.5 Volts

1.0

Watts

Pg

IMD

1

VSWR

1

Power Out - Pk Sync

F = 470 - 860 MHz

8

Watts

Power Gain

Ic = 1.7 Amps

9

10

dB

Intermodulation Distortion

Pref = 8 Watts

-58

dB

Load Mismatch Tolerance

F = 860 MHz

3:1

LVceo

2

BVces

Collector to Base Breakdown

Ic = 20 mA

50

Volts

2

BVebo

2

h

FE

2

Cob

2

θjc

Collector to Emitter Breakdown

Ic = 60 mA

28

Volts

Emitter to Base Breakdown

Ie = 5 mA

3.5

Volts

Current Gain

Vce = 5 V, 500 mA

10

Output Capacitance

Vcb = 26 V, F = 1 MHz

pF

Thermal Resistance

Tc = 25 C

2.5

C/W

o

Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz

European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB

2: Per side

Initial Issue June, 1994

同様の部品番号 - UTV080

メーカー	部品番号	データシート	部品情報
Advanced Semiconductor	UTV005	13Kb / 1P	NPN SILICON RF POWER TRANSISTOR
GHz Technology	UTV005	383Kb / 3P	COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
Advanced Power Technolo...	UTV005P	187Kb / 2P	0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
GHz Technology	UTV010	314Kb / 3P	1 Watt, 20 Volts, Class A UHF Television - Band IV & V
GHz Technology	UTV020	292Kb / 2P	2 Watts, 25 Volts, Class A UHF Television - Band IV & V

More results

同様の説明 - UTV080

メーカー	部品番号	データシート	部品情報
GHz Technology	UTV020	292Kb / 2P	2 Watts, 25 Volts, Class A UHF Television - Band IV & V
	UTV8100B	304Kb / 3P	100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V
	UTV010	314Kb / 3P	1 Watt, 20 Volts, Class A UHF Television - Band IV & V
	UTV040	282Kb / 2P	4 Watts, 25 Volts, Class A UHF Television - Band IV & V
	UTV100B	234Kb / 2P	100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V
Advanced Power Technolo...	UTV005P	187Kb / 2P	0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
GHz Technology	UTV120	265Kb / 3P	12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
	UTV005	383Kb / 3P	COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
	UTV200	265Kb / 3P	COMMON EMITTER transistor 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
New Jersey Semi-Conduct...	UTV040	86Kb / 1P	4 Watts, 25 Volts, Class A UHF Television - Band IV & V