SSF3608-C datasheet(1/5 Pages) SECOS

部品番号	SSF3608-C

部品情報	P-Channel Enhancement Mode Power MOSFET

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メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

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1 / 5 page

Elektronische Bauelemente

SSF3608-C

-1.4A, -20V, RDS(O ) 300mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

10-Dec-2018 Rev. A

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

-20V/ -1.4A

RDS(ON)≦300m @VGS= -4.5V

RDS(ON)≦390m @VGS= -2.5V

RDS(ON)≦700m @VGS= -1.8V

Reliable and Rugged

Green Device Available

APPLICATION

Interfacing

Switching

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-323

3K

7 inch

ORDER INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±8

V

Continuous Drain Current

2,V

GS=4.5V

TA=25°C

ID

-1.4

A

Pulsed Drain Current

1

IDM

-2.8

A

Power Dissipation

2

TA=25°C

PD

350

mW

Operating Junction and Storage Temperature

TJ, TSTG

150, -55~150

°C

Thermal Resistance Ratings

Thermal Resistance Junction-ambient

2

357

Thermal Resistance Junction-ambient

3

RθJA

625

°C/W

Part Number

Type

SSF3608-C

Lead (Pb)-free and Halogen-free

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

SOT-323

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.80

2.20

G

0.1 REF.

B

1.80

2.55

H

0.525 REF.

C

1.1

1.4

J

0.05

0.25

D

0.80

1.15

K

0.8 TYP.

E

1.20

2.00

L

0.65 TYP.

F

0.15

0.50

3608

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