© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Issue A

08/2016

Page 5

TT Electronics | OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

sensors@ttelectronics.com | www.ttelectronics.com

OPS665, OPS666, OPS667, OPS691, OPS692,

OPS693, OPS698

Electrical Specifications

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

Forward Voltage

-

-

1.6

V

Reverse Current

-

-

100

µA

Output Phototransistor

Collector-Emitter Breakdown Voltage

30

-

-

V

Emitter-Collector Breakdown Voltage

5.0

-

-

V

Collector-Emitter Dark Current

OPS665/666/667

OPS691/692/693

OPS698

-

-

-

-

-

-

100

100

100

nA

nA

nA

Combined

Collector-Emitter Saturation Voltage

OPS665/666/667

OPS691/692/693

OPB698

-

-

-

-

-

-

-

0.4

0.4

-

V

V

-

(3)

(3)

On-State Collector Current

OPS665

OPS666

OPS667

OPS691

OPS692

OPS693, OPS698

0.5

1.0

5.0

500

1.0

2.0

-

-

-

-

-

-

-

-

-

-

-

-

mA

mA

mA

µA

mA

mA

(3)

(3)

Notes:

(1)

RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2)

Derate linearly 1.33 mW/° C above 25° C.

(3)

Distance from lens tip to lens tip is 0.250” (6.35 mm) - OPS665, OPS666, OPS667

Distance from lens tip to lens tip is 0.125” (3.175 mm) - OPS691 thru OPS698