TSM8588CS datasheet(1/9 Pages) TSC

部品番号	TSM8588CS

部品情報	Complementary N & P-Channel Power MOSFET

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メーカー	TSC [Taiwan Semiconductor Company, Ltd]

ホームページ	http://www.taiwansemi.com

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TSM8588CS

Taiwan Semiconductor

1

Version: A1811

Complementary N & P-Channel Power MOSFET

FEATURES

● Low gate charge for fast power switching

● 100% UIS and R

g tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Building technologies

● DC Fan

● Motor drives

KEY PERFORMANCE PARAMETERS

PARAMETER

TYPE

VALUE

UNIT

VDS

Q1

60

V

Q2

-60

RDS(on)

(max)

VGS = 10V

Q1

103

m

Ω

VGS = 4.5V

122

VGS = -10V

Q2

180

VGS = -4.5V

220

Qg

Q1

4.4

nC

Q2

4.6

SOP-8

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

Q1

Q2

UNIT

Drain-Source Voltage

VDS

60

-60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25°C

ID

5

-4

A

TA = 25°C

2.5

-2

Pulsed Drain Current

(Note 1)

IDM

20

-16

A

Single Pulse Avalanche Current

(Note 2)

IAS

6.8

-7

A

Single Pulse Avalanche Energy

(Note 2)

EAS

6.9

7.4

mJ

Total Power Dissipation

TC = 25°C

PD

5.7

W

TC = 125°C

1.1

Total Power Dissipation

TA = 25°C

PD

1.4

W

TA = 125°C

0.3

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

MAXIMUM

UNIT

Thermal Resistance

– Junction to Case

RӨJC

22

°C/W

Thermal Resistance

– Junction to Ambient

RӨJA

88

Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is

determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in

2 pad of 2 oz copper.

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