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データシートサーチシステム |
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ISCNH37P データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH37P データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor ISCNH37P · FEATURES · Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching application · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous@TC=25℃ 11 A IDM Drain Current-Single Pulsed 44 A PD Total Dissipation 150 W Tj Operating Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.83 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
同様の部品番号 - ISCNH37P |
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同様の説明 - ISCNH37P |
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