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MBR3045STG データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR3045STG データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR3045STG FEATURES · With TO-220 packaging · High junction temperature capability · Low forward voltage drop · High current capability · Low power loss, high efficiency · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Free-Wheeling diodes · Reverse battery protection · Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current@Tc=130℃ 30 A IFSM Nonrepetitive Peak Surge Current ( 8.3ms single half sine-wave superimposed on rated load conditions)tp=5μs sine 150 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
同様の部品番号 - MBR3045STG |
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同様の説明 - MBR3045STG |
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