Gate-Body Leakage Current

-

-

±10

μA

On Characteristics (Note 3)

Gate Threshold Voltage

0.45

0.7

1.0

V

-

19

22

mΩ

Drain-Source On-State Resistance

-

21

27

mΩ

Forward Transconductance

8

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

-

660

-

PF

Output Capacitance

-

160

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

87

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

-

0.5

nS

Turn-on Rise Time

-

1

nS

Turn-Off Delay Time

-

12

nS

Turn-Off Fall Time

-

4

nS

Total Gate Charge

-

8

nC

Gate-Source Charge

-

2.5

-

nC

Gate-Drain Charge

-

3

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

-

-

1.2

V

Diode Forward Current (Note 2)

-

-

6

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production

PIN

CONFIGURATION

FIR3416LTG

www.First-semi.com

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