SM1691OSCS datasheet(2/12 Pages) SINOPWER

部品番号	SM1691OSCS

部品情報	Single N-Channel Enhancement Mode MOSFET with Schottky Diode

PDF	12 Pages

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メーカー	SINOPWER [Sinopower Semiconductor Inc]

ホームページ	http://www.sinopowersemi.com/Form2/index.aspx

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SM1691OSCS

Rev. A.3 - May, 2018

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

Common Ratings

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±20

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

Diode Continuous Forward Current

TA=25°C

0.1

Continuous Drain Current

TA=25°C

0.26

TA=70°C

0.21

IDM

Pulsed Drain Current

TA=25°C

Maximum Power Dissipation

TA=25°C

0.25

TA=70°C

0.16

RqJA

Thermal Resistance-Junction to Ambient

Steady State

500

°C/W

Channel 1

Symbol

Parameter

Rating

Unit

Common Ratings

VRRM

Peak Repetitive Reverse Voltage

VRWM

Working Peak Reverse Voltage

DC Reverse Voltage

VRMS

RMS Reverse Voltage

Diode Continuous Forward Current

TA=25°C

0.35

ISM

Non-Repetitive Peak Forward Current

TA=25°C

1.5

Maximum Power Dissipation

TA=25°C

0.25

TA=70°C

0.16

RqJA

Thermal Resistance-Junction to Ambient

500

°C/W

Note a：Pulse width limited by max. junction temperature.

Note b：Surface Mounted on 1in2 pad area.

Channel 2

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