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EM8801AG データシート(PDF) 4 Page - Excelliance MOS Corp. |
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EM8801AG データシート(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 10 page ![]() 2011/12/09 Rev.A.1 4 EM8801A Absolute Maximum Ratings (Note 1) Supply voltage, VCC--------------------------------------------------------------- -0.3V to 40V GATE---------------------------------------------------------------------------------- -0.3V to 40V Other pins--------------------------------------------------------------------------- 0.3V to 6V Power Dissipation, PD @ TA = 25°C, SOP-8 -------------------------------- 0.909W Package Thermal Resistance, ΘJA, SOP-8 (Note 2)------------------------- 110°C/W Junction Temperature------------------------------------------------------------ 150°C Lead Temperature (Soldering, 10 sec.)---------------------------------------- 260°C Storage Temperature Range----------------------------------------------------- -65°C to 150°C ESD susceptibility (Note3) HBM (Human Body Mode)------------------------------------------------------ 2kV MM (Machine Mode)------------------------------------------------------------ 200V Recommended Operating Conditions (Note4) Supply Input Voltage, VCC ----------------------------------------------------- 9.75V to 34V VCC capacitor --------------------------------------------------------------------- 1uF to 10uF Junction Temperature ------------------------------------------------------- -40°C to 125°C Ambient Temperature ------------------------------------------------------- -40°C to 85°C Electrical Characteristics VCC=12V, RTOFF=40kohm, TA=25℃, unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Units VCC Section VCC On Threshold Voltage VTH-ON 9.0 9.75 10.5 V VCC Off Hysteresis Voltage VTH-HY 1.5 V Current Consumption in Latch Mode ICC-LATCH 0.6 1.2 mA Current Consumption in Start-up ICC-OP1 VCC=VTH-ON-0.2V 0.05 0.08 mA Current Consumption in Device Disable ICC-OP2 VCC=12V, VPWMD=0V 0.6 1.2 mA Current Consumption in Device Switching ICC-OP3 CGATE=1nF FSW=60KHz 1.5 2.35 mA VCC OVP Protect voltage IOVP 34 36 38 V Gate Section Rising Time TR CL = 1nF 80 140 ns Falling Time TF CL = 1nF 30 60 ns Gate Maximum Voltage VGATE 15 V Current-Sense Section Maximum Internal Current Set-point VCSLim 0.285 0.3 0.315 V Leading Edge Blanking Time TLEB 300 ns |
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