DAM10N600F datasheet(1/4 Pages) DACO

部品番号	DAM10N600F

部品情報	N-Channel Enhancement Mode MOSFET

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メーカー	DACO [DACO SEMICONDUCTOR CO.,LTD.]

ホームページ	http://www.dacosemi.com/

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N-Channel Enhancement Mode MOSFET

Features

VDSS = 600V

RDS(ON)

Typ.0.56Ω @ VGS = 10V

Fully Avalanche Rated

Pb Free & RoHS Compliant

Applications

Backlighting

Synchronous Rectifiers

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

Ratings

Unit

Drain Source Voltage

VDS

600

V

Gate Source Voltage

VGS

±30

V

Drain Current Continuous

@ Tc = 25°C

ID

10

A

@ Tc = 100°C

6.3

Drain Current Pulsed@ TC = 25°C

IDM

40

A

Single Pulse Avalanche Energy

EAS

720

mJ

Single Pulse Avalanche Current

IAS

12

A

Maximum Power Dissipation

PD

44.6

W

Storage Temperature Range

TSTG

-55 to +150

°C

Operating Junction Temperature Range

TJ

-55 to +150

°C

Thermal Resistance Junction to Case

R

θJc

2.8

°C/W

Aug.2017

DAM10N600F

Note3

同様の部品番号 - DAM10N600F

メーカー	部品番号	データシート	部品情報
DACO SEMICONDUCTOR CO.,...	DAM10N600C	281Kb / 4P	N-Channel Enhancement Mode MOSFET

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