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DRAQ75-150-R データシート(PDF) 1 Page - Eaton All Rights Reserved. |
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DRAQ75-150-R データシート(HTML) 1 Page - Eaton All Rights Reserved. |
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1 / 4 page ![]() Engineering Product Specification DRAQ75-150-R Revision C TITLE: Shielded Drum Inductor 15uH @ 1.2A (peak), SMT, 4 Pads Eaton Confidential 1 Specification 1.1 Electrical parameters Parallel Connections (1,2 - 3,4) Test item Test pin Test condition Spec OCL 1,2 – 3,4 @0.25Vrms, 100KHz 15.14 uH ± 25% OCL 1,2 – 3,4 @0.25 Vrms, 100kHz & 2.36 ADC 9.08 uH min Turns Ratio (1 - 3):(2 – 4) @0.25 Vrms, 100kHz 1:1(±5%) DCR (1 – 3) @ 25ºC 160.0mΩ max DCR (2 – 4) @ 25ºC 160.0mΩ max Hi-Pot 1 to pin 4 500Vdc 1.0 mA, 1 sec 500Vdc Irms 1,2 – 3,4 For approximately 40ºC rise above ambient 2.80 A Typ Isat1 1,2 – 3,4 @ 0.25V, 100KHz 2.36 A Typ Isat2 1,2 – 3,4 @ 0.25V, 100KHz 1.89 A Typ Tem. Range @ Irms -40°C ~ 165°C K Factor 1,2 – 3,4 67.5 1. Open Circuit Inductance (OCL) Test Parameters: 100kHz, 0.25Vrms, 0.0Adc, +25 °C 2. Full Load Inductance (FLL) Test Parameters: 100kHz, 0.25Vrms, Isat1, +25 °C 3. Measure Hi-pot from winding to winding 4. IRMS: DC current for an approximate temperature rise of 40℃ without core loss. Derating is necessary for AC currents. PCB layout, trace thickness and width, air-flow, and proximity of other heat generating components will affect the temperature rise. It is recommended that the temperature of the part not exceed 165 °C under worst case operating conditions verified in the end application. 5. ISAT1: Peak current for approximately 30% roll-off at +25 °C 2.36 A 6. ISAT2: Peak current for approximately 40% roll-off at +125 °C 1.89 A 7. K-factor: Used to determine Bp-p for core loss (see graph). Bp-p = K * L * I * 10 -3, Bp-p : (Gauss), K: (K-factor from table), L: (inductance in nH), I (peak-to-peak ripple current in amps) 8. Storage Temperature: -40 °C to +165 °C 9. Operating Temperature: -40 °C to +165 °C (ambient + self-temperature rise) 10. Resistance to soldering heat: 260±5 °C for 10 ~ 11 seconds |
同様の部品番号 - DRAQ75-150-R |
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同様の説明 - DRAQ75-150-R |
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