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IRLR8103V データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 IRLR8103V
部品情報  Isc N-Channel MOSFET Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRLR8103V データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  IRLR8103V Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRLR8103V Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
Isc N-Channel MOSFET Transistor
IRLR8103V
·
FEATURES
·
With To-252(DPAK) package
·
Low input capacitance and gate charge
·
Low gate input resistance
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous@Tc=25℃
Tc=90℃
91
63
A
IDM
Drain Current-Single Pulsed
363
A
PD
Total Dissipation @TC=25℃
115
W
Tch
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
50
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
1.09
℃
/W


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