EMF44P02JS datasheet(3/5 Pages) EXCELLIANCE

部品番号	EMF44P02JS

部品情報	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

メーカー	EXCELLIANCE [Excelliance MOS Corp.]

ホームページ	http://www.excelliancemos.com/

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3 / 5 page

2015/11/3

p.3

EMF44P02JS

Normalized on‐Resistance v.s. Junction Temperature

T ‐ Junction Temperature (°C)

1.2

0.6

‐50

0.8

1.0

‐25

I = ‐4A

V = ‐4.5V

1.4

1.6

1.8

150

100

125

V = ‐ 5V

Q ‐ Gate Charge( nC )

I = ‐ 4A

‐ 10V

Gate Charge Characteristics

Body Diode Forward Voltage Variation with

Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage(V)

0.6

0.0001

0.001

0.01

0.2

0.4

25°C

V = 0V

0.1

0.8

1.0

‐55°C

1.2

‐ V , Drain‐Source Voltage( V )

Capacitance Characteristics

450

150

300

Crss

Coss

600

750

900

Ciss

f =1MHz

VGS=0 V

T = 25°C

‐ V ‐ Gate‐Source Voltage( V )

0.04

0.02

0.06

0.12

0.08

0.10

0.14

T = 125°C

I = ‐ 2A

On‐Resistance Variation with Gate‐Source Voltage

‐V ‐ Drain‐Source Voltage( V )

0.5

‐3.0V

‐2.5V

1.0

1.5

2.0

‐4.0V

‐3.5V

V = ‐4.5 V

Typical output characteristics

‐1.8V

2.5

TYPICAL CHARACTERISTICS

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