PXFE181507FC-V1-R0 datasheet(1/8 Pages) CREE

部品番号	PXFE181507FC-V1-R0

部品情報	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

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メーカー	CREE [Cree, Inc]

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02, 2018-08-30

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXFE181507FC

Package H-37248G-4/2

Thermally-Enhanced High Power RF LDMOS FET

175 W, 28 V, 1805 – 1880 MHz

Features

• Broadband internal input and output matching

• Typical Pulsed CW performance, 1842 MHz, 28 V, single

side, 16 µs, 10% duty cycle, class AB test

- Output power at P1dB = 175 W

- Output power at P3dB = 222 W

-EfficiencyatP3dB = 60%

- Gain = 21.3 dB

• Capable of handling 10:1 VSWR @ 28 V, 180 W (CW)

output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-

standardcellularpoweramplifierapplicationsinthe1805to1880MHz

frequency band. Features include input and output matching, high gain

andthermally-enhancedpackagewithearlessflange.Manufacturedwith

Wolfspeed's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability

RF Characteristics

Single-carrier WCDMA Specifications (testedinWolfspeedproductiontestfixture)

VDD = 28 V, IDQ = 900 mA, POUT = 50 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01%

CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

19

20

—

dB

DrainEfficiency

hD

32

36

—

%

Adjacent Channel Power Ratio

ACPR

—

–31

–27

dBc

Output PAR at 0.01% probability on CCDF

OPAR

5.7

6.2

—

dB

PXFE181507FC

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ= 900 mA, ƒ = 1880 MHz

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxfe181507fc_g1

同様の部品番号 - PXFE181507FC-V1-R0

メーカー	部品番号	データシート	部品情報
WOLFSPEED, INC.	PXFE181507FC-V1-R0	695Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28

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