PXFE181507FC-V1-R2 datasheet(3/8 Pages) CREE

部品番号	PXFE181507FC-V1-R2

部品情報	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

PDF	8 Pages

Scroll/Zoom	100%

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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3 / 8 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02, 2018-08-30

PXFE181507FC

-70

-60

-50

-40

-30

-20

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ(MAIN) = 900 mA,

ƒ = 1880 MHz, 3GPP WCDMA signal,

PAR = 10 dB, BW = 3.84 MHz

ACPU

ACPL

Efficiency

pxfe181507fc_g2

1650 1700 1750 1800 1850 1900 1950 2000

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 28 V, IDQ = 900 mA, POUT = 46.99 dBm,

3GPP WCDMA signal, PAR = 10 dB

Efficiency

Gain

pxfe181507fc_g3

Typical Performance (data taken in test fixture)

-35

-30

-25

-20

-15

-10

-5

-40

-35

-30

-25

-20

-15

-10

1650 1700 1750 1800 1850 1900 1950 2000

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 28 V, IDQ = 900 mA, POUT = 46.99 dBm,

3GPP WCDMA signal, PAR = 10 dB

ACPU

ACPL

IRL

pxfe181507fc_g4

Output Power (dBm)

CW Performance

VDD = 28 V, IDQ = 900 mA

1805MHz Gain

1842MHz Gain

1880MHz Gain

1805MHz Eff

1842MHz Eff

1880MHz Eff

pxfe181507fc_g5

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