IRF3205

HEXFET ® Power MOSFET

www.artschip.com

1

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175℃ Operating Temperature

Fast Switching

Fully Avalanche Rated

⑤

Description

Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a

wide variety of applications.

The TO-220 packages is universally preferred for all commercial-industrial applications at power dissipation levels to

approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

Absolute Maximum Ratings

Parameter

Max.

Units

110⑤

80

Pulsed Drain Current ①

390

A

Power Dissipation

200

W

Linear Derating Factor

1.3

W/℃

Gate-to-Source Voltage

±20

V

Avalanche Current ①

62

A

Repetitive Avalanche Energy ①

20

mJ

dv/dt

Peak Diode Recovery dv/dt ③

5.0

V/ns

Operating Junction and

Storage Temperature Range

-55 to +175

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

℃

Mounting torque, 6-32 or M3 srew

10 Ibf

•in (1.1 N•m)

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

-

0.75

Case-to-Sink, Flat, Greased Surface

0.50

-

Junction-to-Ambient

-

62

℃

/W