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GPR26L128A データシート(PDF) 9 Page - Generalplus Technology Inc.

部品番号 GPR26L128A
部品情報  128M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface
PDF  16 Pages
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メーカー  GENERALPLUS [Generalplus Technology Inc.]
ホームページ  http://www.generalplus.com
Logo GENERALPLUS - Generalplus Technology Inc.

GPR26L128A データシート(HTML) 9 Page - Generalplus Technology Inc.

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GPR26L128A
© Generalplus Technology Inc.
Proprietary & Confidential
9
Aug. 13, 2009
Version: 1.3
SB
SB
Figure5. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence
9.2. Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (SB) Low. The
instruction code for the Read Data Bytes at Higher Speed
(FAST_READ) instruction is followed by a 3-byte address (A23-A0)
and a dummy byte, each bit being latched-in during the rising
edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on Serial Data Output (Q), each bit being
shifted out, at a maximum frequency fC, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 5. The first byte
addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is
shifted out. The whole memory can, therefore, be read with a
single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address
counter rolls over to 000000h, allowing the read sequence to be
continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction
is terminated by driving Chip Select (SB) High. Chip Select (SB)
can be driven High at any time during data output.



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