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HMJE13007

MJE13007

NPN EPITAXIAL PLANAR TRANSISTOR

Description

• High Voltage, High Speed Power Switch

• Switch Regulators

• PWM Inverters and Motor Controls

• Solenoid and Relay Drivers

• Deflection Circuits

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -50 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ..................................................................................... 80 W

• Maximum Voltages and Currents (Ta=25°C)

VCEX Collector to Emitter Voltage .................................................................................... 700 V

VCEO Collector to Emitter Voltage .................................................................................... 400 V

VEBO Emitter to Base Voltage .............................................................................................. 9 V

IC Collector Current ........................................................................................... Continuous 8 A

IB Base Current .................................................................................................. Continuous 4 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCEX

700

-

-

V

IC=1mA, VBE(off)=1.5V

BVCEO

400

-

-

V

IC=10mA

IEBO

-

-

100

uA

VEB=9V

ICEX

-

-

100

uA

VCE=700V, VBE(off)=1.5V

*VCE(sat)1

-

-

1

V

IC=2A, IB=0.4A

*VCE(sat)2

-

-

2

V

IC=5A, IB=1A

*VCE(sat)3

-

-

3

V

IC=8A, IB=2A

*VBE(sat)

-

-

1.2

V

IC=2A, IB=0.4A

*VBE(sat)

-

-

1.6

V

IC=5A, IB=1A

*hFE1

10

-

-

IC=2A, VCE=5V

*hFE2

6

-

-

IC=5A, VCE=5V

*hFE3

10

-

30

IC=0.5A, VCE=5V

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%