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GD25B127DFJS データシート(PDF) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

部品番号 GD25B127DFJS
部品情報  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  65 Pages
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メーカー  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
ホームページ  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25B127DFJS データシート(HTML) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B127D
45
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 37. Power-on Timing Sequence Diagram
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table 8.1. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
2.5
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status
Register bits are set to 0, except DRV1 bit (S22) and QE bit (S9) are set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
-40 to 105
-40 to 125
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V



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