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GD25D80CEFG データシート(PDF) 32 Page - GigaDevice Semiconductor (Beijing) Inc.

部品番号 GD25D80CEFG
部品情報  3.3V Uniform Sector Standard and Dual Serial Flash
PDF  42 Pages
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メーカー  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
ホームページ  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25D80CEFG データシート(HTML) 32 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Standard and Dual Serial Flash
GD25D80C
32
(T= -40℃~125℃, VCC=2.7~3.6V, CL=30pf)
Symbol
Parameter
Min.
Typ.
Max.
Unit
fC
Serial Clock Frequency For: Fast read (0B)
100
MHz
fR
Serial Clock Frequency For: Read (03H) ,Dual Output (3BH)
80
MHz
tCLH
Serial Clock High Time
4
ns
tCLL
Serial Clock Low Time
4
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.1
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.1
V/ns
tSLCH
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
tSHSL
CS# High Time (Read/Write)
40
ns
tSHQZ
Output Disable Time
6
ns
tCLQX
Output Hold Time
0
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
2
ns
tCLQV
Clock Low To Output Valid
6
ns
tWHSL
Write Protect Setup Time Before CS# Low
20
ns
tSHWL
Write Protect Hold Time After CS# High
100
ns
tDP
CS# High To Deep Power-Down Mode
0.1
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
0.1
μs
tRES2
CS# High To Standby Mode With Electronic Signature Read
0.1
μs
tW
Write Status Register Cycle Time
4
30
ms
tBP1
Byte Program Time(First Byte)
30
80
μs
tBP2
Addition Byte Program Time(After First Byte)
2.5
20
μs
tPP
Page Programming Time
0.7
4.0
ms
tSE
Sector Erase Time
100
400
ms
tBE1
Block Erase Time (32K Bytes)
0.3
1.2
s
tBE2
Block Erase Time (64K Bytes)
0.5
2.0
s
tCE
Chip Erase Time (GD25D80C)
8
20
s
Note:
1. Typical values given for TA=25°C VCC = 1.8V.
2. Value guaranteed by design and/or characterization, not 100% tested in production.



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