GD25VE40C datasheet(28/55 Pages) GIGADEVICE

28 / 55 page

Uniform Sector

Dual and Quad Serial Flash

GD25VE40C

Figure20. Sector Erase Sequence Diagram

7.17.

32KB Block Erase (BE) (52H)

The 32KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN)

command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE)

command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside

the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the

sequence.

The 32KB Block Erase command sequence: CS# goes low  sending 32KB Block Erase command  3-byte address

on SI  CS# goes high. The command sequence is shown in Figure21. CS# must be driven high after the eighth bit of the

last address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon as CS# is

driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress,

the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1

during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which is

protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is not executed.

Figure21. 32KB Block Erase Sequence Diagram

7.18.

64KB Block Erase (BE) (D8H)

The 64KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN)

command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE)

command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside

the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration of the

sequence.

The 64KB Block Erase command sequence: CS# goes low  sending 64KB Block Erase command  3-byte address

on SI  CS# goes high. The command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the

last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon as CS# is

driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress,

the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1

during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

Command

52H

CS#

SCLK

29 30 31

MSB

24 Bits Address

23 22

Command

20H

CS#

SCLK

29 30 31

MSB

24 Bits Address

23 22

GD25VE40C データシート(PDF) 28 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25VE40C データシート(HTML) 28 Page - GigaDevice Semiconductor (Beijing) Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55

データシートダウンロード