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SAMWIN
SW2N60
REV0.2
04.11.1
3/6
Fig 1. On-State Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 2. Transfer Characteristics
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitive)
10
0
10
1
10
-1
10
0
V
ds
,Drain-to-Source voltage [V]
4.0V
VGS
top: 15V
10V
9V
8V
7V
6V
5.5V
5V
4.5V
bottom:4.0V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
3
4
5
6
7
8
I
D
, Drain Current[A]
V
GS
=10V
V
GS
=20V
150℃
25℃
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
∗ Note:
1.v
GS
=0v
2.250us test
V
SD
,Source-Drain Voltage[V]
0
5
10
15
20
0
2
4
6
8
10
12
Q
G
,Total Gate Charge [nC]
V
DS
=120V
V
DS
=300V
V
DS
=480V
Note:I
D
=1.8A
24
68
10
10
-1
10
0
25
oC
V
GS
, Gate-Source Voltage [V]
150
oC
Note:
1.V
DS
=50V
2.250us pulse test.
10
-1
10
0
10
1
0
100
200
300
400
500
Note:
1.V
GS
=0V
2.f=1MHz.
C
rss
C
iss
C
oss
V
DC
,Drain-Source Voltage [V]
Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd
Crss = Cgd
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