Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CSD1489

TO-92

BCE

Low Frequency Power Amplifier.

Complementary CSB1058

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

BVCBO

20

V

Collector Emitter Voltage

BVCEO

16

V

Emitter Base Voltage

BVEBO

6.0

V

Collector Current

IC

2.0

A

Collector Power Dissipation

PC

0.75

W

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Base Voltage

BVCBO

IC=10uA, IE=0

20

-

-

V

Collector Emitter Voltage

BVCEO

IC=1mA, IB=0

16

-

-

V

Emitter Base Voltage

BVEBO

IE=10uA, IC=0

6.0

-

-

V

Collector Cut off Current

ICBO

VCB=16V, IE=0

-

-

2.0

uA

Emitter Cut off Current

IEBO

VEB=6V, IC=0

-

-

0.2

uA

DC Current Gain

hFE *

VCE=2V, IC=0.1A

100

-

500

VCE=2V, IC=2A

75

-

-

Collector Emitter Saturation Voltage

VCE(Sat)

IC=1A, IB=0.1A

-

-

0.3

V

Dynamic Characteristics

Transition Frequency

ft

VCE=2V, IC=10mA,

-

80

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

20

-

pF

f=1MHz

hFE* Classification :

A 100-240;

B 200-400;

C 350-500

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

Data Sheet

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