IXFN30N120P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

13

22

S

C

iss

19

nF

C

oss

V

960

pF

C

rss

25

pF

R

Gi

Gate Input Resistance

1.7



t

d(on)

57

ns

t

r

60

ns

t

d(off)

95

ns

t

f

56

ns

Q

g(on)

310

nC

Q

gs

V

104

nC

Q

gd

137

nC

R

thJC

0.14

C/W

R

thCS

0.05

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

30

A

I

SM

Repetitive, Pulse Width Limited by T

JM

120

A

V

SD

I

1.5

V

t

rr

300 ns

Q

RM

1.6

C

I

RM

14.0

A

Note

1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V