IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA2R4N120P IXTP2R4N120P

IXTH2R4N120P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

2.4

A

I

SM

Repetitive, pulse Width Limited by T

JM

7.2

A

V

SD

I

1.5

V

t

rr

920

ns

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

1.2

2.0

S

C

iss

1207

pF

C

oss

V

57

pF

C

rss

11

pF

t

d(on)

22

ns

t

r

25

ns

t

d(off)

70

ns

t

f

32

ns

Q

g(on)

37

nC

Q

gs

V

6

nC

Q

gd

20

nC

R

thJC

1.0

C/W

R

thCS

TO-220

0.50

C/W

TO-247

0.21

C/W

Resistive Switching Times

V

R