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WNB111C5APTS データシート(PDF) 2 Page - WeEn Semiconductors |
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WNB111C5APTS データシート(HTML) 2 Page - WeEn Semiconductors |
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2 / 7 page ![]() WNB111C5APTS WNB111C5APTS All information provided in this document is subject to legal disclaimers. Product data sheet 29 October 2017 2 / 7 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; square-wave pulse - 15 A IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; square-wave pulse - 30 A tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse - 180 A IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse - 200 A Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C ** ** * * * ** ** ** WeEn Semiconductors © WeEn Semiconductors Co., Ltd. 2017. All rights reserved |
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