FDS21 datasheet(1/3 Pages) FS

部品番号	FDS21

部品情報	HIGH VOLTAGE SWITCHING DIODE

PDF	3 Pages

Scroll/Zoom	100%

メーカー	FS [First Silicon Co., Ltd]

ホームページ	http://www.firstsilicon.co.kr/

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1 / 3 page

SC-76 / SOD-323

USC

2

ANODE

1

CATHODE

• Applications

High speed switching

• Features

1) Small surface mounting type.

2) High Speed. (trr = 50ns max.)

3) High reliability with high surge current handing capability.

• Construction

Silicon epitaxial planar

1

Device Marking and Ordering Information

•

Device

Marking

Shipping

3000/Tape&Reel

FDS21

JS

2012. 01. 16

1/3

SEMICONDUCTOR

TECHNICAL DATA

FDS21U

Revision No : 0

HIGH VOLTAGE SWITCHING DIODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

V

e

g

a

t

l

o

V

e

s

r

e

v

e

R

s

u

o

u

n

i

t

n

o

C

R

250

Vdc

I

t

n

e

r

u

C

d

r

a

w

r

o

F

k

a

e

P

F

200

mAdc

Peak Forward Surge Current

IFM(surge)

625

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,*

PD

200

mW

TA = 25°C

Derate above

7

5

.

1

C

°

5

2

mW/°C

Thermal Resistance Junction to Ambient

RθJA

635

°C/W

Junction and Storage

TJ, Tstg

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

x

a

M

n

i

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Unit

OFF CHARACTERISTICS

I

t

n

e

r

u

C

e

g

a

k

a

e

L

e

g

a

t

l

o

V

e

s

r

e

v

e

R

µAdc

(VR

0

.

1

–

)

c

d

V

0

2

=

(VR = 200 Vdc, TJ

0

1

–

)

C

°

0

5

1

=

Reverse Breakdown Voltage

V(BR)

250

–

Vdc

(IBR = 100

µAdc)

V

e

g

a

t

l

o

V

d

r

a

w

r

o

F

mV

(IF

0

1

–

)

c

d

A

m

0

1

=

(IF

0

5

2

1

–

)

c

d

A

m

0

2

=

Diode Capacitance

CD

–

5.0

pF

(VR = 0, f = 1.0 MHz)

Reverse Recovery Time

trr

–

50

ns

(IF = IR = 30 mAdc, RL = 100 Ω)

同様の部品番号 - FDS21

メーカー	部品番号	データシート	部品情報
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First Silicon Co., Ltd	FDS21S	139Kb / 3P	High Voltage Switching Diode

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