EPC2021 datasheet(3/6 Pages) EPC

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eGaN® FET DATASHEET

| 3

EPC2021

All measurements were done with substrate shortened to source.

Figure 5a: Capacitance (Linear Scale)

VDS – Drain-to-Source Voltage (V)

3000

2500

2000

1500

1000

500

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

1000

100

Figure 5b: Capacitance (Log Scale)

VDS – Drain-to-Source Voltage (V)

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

Figure 6: Gate Charge

QG – Gate Charge (nC)

ID = 29 A

VDS = 40 V

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VSD– Source-to-Drain Voltage (V)

Figure 7: Reverse Drain-Source Characteristics

400

300

200

100

25˚C

125˚C

VGS = 0 V

Figure 8: Normalized On-State Resistance vs. Temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

100

125

150

TJ – Junction Temperature (°C)

ID = 29 A

VGS = 5 V

Figure 9: Normalized Threshold Voltage vs. Temperature

1.40

1.30

1.20

1.10

1.00

0.90

0.80

0.70

0.60

100

125

150

TJ – Junction Temperature (°C)

ID = 14 mA

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