FFB3906D datasheet(1/6 Pages) FS

部品番号	FFB3906D

部品情報	Dual General Purpose PNP Transistor

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メーカー	FS [First Silicon Co., Ltd]

ホームページ	http://www.firstsilicon.co.kr/

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SOT-363

Dual General Purpose PNP Transistor

2015. 03. 10

1/6

SEMICONDUCTOR

TECHNICAL DATA

FFB3906D

Revision No : 0

The FFB3906D device is spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

• hFE, 100–300

• Low VCE(sat),≤ 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

• Device Marking : FFB3906D = A2

Featrues

compliance with RoHS requirements.

We declare that the material of product

Q1

Q2

(1)

(2)

(3)

(4)

(5)

(6)

Device

Marking

Shipping

ORDERING INFORMATION

FFB3906D

A2

3000 Units/Reel

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

–40

Vdc

Collector–Base Voltage

VCBO

–40

Vdc

Emitter–Base Voltage

VEBO

–5.0

Vdc

Collector Current – Continuous

IC

–200

mAdc

Electrostatic Discharge

ESD

HBM>16000,

MM>2000

V

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Package Dissipation (1)

TA = 25℃

PD

150

mW

Thermal Resistance Junction to

Ambient

R JA

833

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

–55 to +150

°C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

Rating

MAXIMUM RATINGS

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