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PRMD2 データシート(PDF) 7 Page - Nexperia B.V. All rights reserved |
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PRMD2 データシート(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 14 page ![]() Nexperia PRMD2 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) 006aac757 IC (mA) 10-1 102 10 1 102 103 fT (MHz) 10 VCE = 5 V; Tamb = 25 °C Fig. 9. NPN transistor: Transition frequency as a function of collector current; typical values of built-in transistor IC (mA) -10-1 -102 -10 -1 006aac800 102 10 103 hFE 1 (1) (2) (3) VCE = -5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig. 10. PNP transistor: DC current gain as a function of collector current; typical values VCE (V) 0 -5 -4 -2 -3 -1 aaa-017929 -0.04 -0.06 -0.02 -0.08 -0.1 IC (A) 0 IB = -0.08 mA -0.24 mA -0.32 mA -0.40 mA -0.48 mA -0.56 mA -0.64 mA -0.72 mA -0.80 mA -0.16 mA Tamb = 25 °C Fig. 11. PNP transistor: Collector current as a function of collector-emitter voltage; typical values aaa-017928 IC (mA) -10-1 -102 -10 -1 -10-1 -1 VCEsat (V) -10-2 (1) (2) (3) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig. 12. PNP transistor: Collector-emitter saturation voltage as a function of collector current; typical values PRMD2 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 14 September 2018 7 / 14 |
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