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ST7SB20J/US データシート(PDF) 126 Page - STMicroelectronics |
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ST7SB20J/US データシート(HTML) 126 Page - STMicroelectronics |
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126 / 154 page ![]() ST7232A 126/154 12.8 I/O PORT PIN CHARACTERISTICS 12.8.1 General Characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Notes: 1. Data based on characterization results, not tested in production. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 3. When the current limitation is not possible, the VIN maximum must be respected, otherwise refer to IINJ(PIN) specifica- tion. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Refer to Section 12.2.2 on page 112 for more details. 4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example and leaving the I/O unconnected on the board or an external pull-up or pull-down resistor (see Figure 65). Data based on design simulation and/or technology characteristics, not tested in production. 5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de- scribed in Figure 66). 6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. Figure 65. Unused I/O Pins configured as input Figure 66. Typical IPU vs. VDD with VIN=VSS Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage (standard voltage devices)1) 0.3xVDD V VIH Input high level voltage 1) 0.7xVDD V Vhys Schmitt trigger voltage hysteresis 2) 0.7 IINJ(PIN) 3) Injected Current on Flash device pin PB0 VDD=5V 0+4 mA Injected Current on other I/O pins ±4 ΣIINJ(PIN)3) Total injected current (sum of all I/O and control pins) ±25 Ilkg Input leakage current VSS ≤ VIN ≤ VDD ±1 µA IS Static current consumption induced by each floating input pin Floating input mode4) 200 RPU Weak pull-up equivalent resistor 5) VIN=VSS VDD=5V 50 120 250 k Ω CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time 1) CL=50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time 1) 25 tw(IT)in External interrupt pulse time 6) 1tCPU 10k Ω UNUSED I/O PORT ST7XXX 10k Ω UNUSED I/O PORT ST7XXX VDD Note: I/O can be left unconnected if it is configured as output greater EMC robustness and lower cost. (0 or 1) by the software. This has the advantage of 0 10 20 30 40 50 60 70 80 90 22.5 33.5 4 4.5 55.5 6 Vdd(V) Ta=1 40°C Ta=9 5°C Ta=2 5°C Ta=-45 °C 1 |
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