MMBT4140 datasheet(2/4 Pages) PJSEMI

部品番号	MMBT4140

部品情報	NPN Transistor

PDF	4 Pages

Scroll/Zoom	100%

メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

Logo

2 / 4 page

2 / 4

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

MMBT4140

NPN Transistor

www.pingjingsemi.com

Revision：1.0 May-2019

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 5 V, IC = 1 mA

at VCE = 5 V, IC = 500 mA

at VCE = 5 V, IC = 1 A

hFE

300

200

900

Collector Base Cutoff Current

at VCB = 40 V

ICBO

100

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

100

Collector Emitter Saturation Voltage

at IC = 100 mA, IB = 1 mA

at IC = 500 mA, IB = 50 mA

at IC = 1 A, IB = 100 mA

VCE(sat)

200

250

500

Base Emitter Saturation Voltage

at IC = 1 A, IB = 100 mA

VBE(sat)

1.2

Base Emitter Turn-on Voltage

at VCE = 5 V, IC = 1 A

VBE(on)

1.1

Transition Frequency

at VCE = 10 V, IC = 50 mA, f = 100 MHz

150

MHz

Collector Capacitance

at VCB = 10 V, f = 1 MHz, IE = 0

Cob

MMBT4140 データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

MMBT4140 データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4

データシートダウンロード