MMBTSC1815 datasheet(1/4 Pages) PJSEMI

部品番号	MMBTSC1815

部品情報	PNP Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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MMBTS

A1015

PNP Transistor

1 /

4

www.pingjingsemi.com

Revision：1.0 Oct-2017

Features



For Switching and AF Amplifier Applications.



As Complementary Type of the NPN Transistor

MMBTSC1815 is Recommended.

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

50

V

Collector Emitter Voltage

-VCEO

50

V

Emitter Base Voltage

-VEBO

5

V

Collector Current

-IC

150

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55 to 150

℃

SOT-23

(TO-236)

1.Base 2.Emitter 3.Collector

Marking:

MMBTSA1015O:10X

MMBTSA1015Y:10Y

MMBTSA1015G:10G

MMBTSA1015L:10L

同様の部品番号 - MMBTSC1815

メーカー	部品番号	データシート	部品情報
SEMTECH ELECTRONICS LTD...	MMBTSC1815	191Kb / 2P	NPN Silicon Epitaxial Planar Transistor
Dongguan Pingjingsemi T...	MMBTSC1815	1Mb / 4P	NPN Transistor
	MMBTSC1815G	1Mb / 4P	NPN Transistor
	MMBTSC1815L	1Mb / 4P	NPN Transistor
	MMBTSC1815O	1Mb / 4P	NPN Transistor

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