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MMBTSC1623 データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTSC1623 データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 4 page ![]() MMBTSC1623 NPN Transistor www.pingjingsemi.com 2 / 4 Revison:1.0 July-2018 Electrical Characteristics Ratings at 25 ℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group L4 L5 L6 L7 HFE 90 135 200 300 40 - - - - - 40 180 270 400 600 40 - Collector Base Cutoff Current at VCB = 60 V ICBO - - 0.1 μA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 0.1 μA Collector Base Breakdown Voltage At IC = 100 μA V(BR)CBO 60 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 50 - - V Emitter Base Breakdown Voltage at IE = 100 μA V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VCE(sat) - - 0.3 V Base Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VBE(sat) - - 1 V Transition Frequency at VCE = 6 V, IC = 10 mA FT - 250 - MHz |
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