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PEMB13 データシート(PDF) 3 Page - NXP Semiconductors

部品番号 PEMB13
部品情報  PNP/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm
PDF  8 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PEMB13 データシート(HTML) 3 Page - NXP Semiconductors

  PEMB13 Datasheet HTML 1Page - NXP Semiconductors PEMB13 Datasheet HTML 2Page - NXP Semiconductors PEMB13 Datasheet HTML 3Page - NXP Semiconductors PEMB13 Datasheet HTML 4Page - NXP Semiconductors PEMB13 Datasheet HTML 5Page - NXP Semiconductors PEMB13 Datasheet HTML 6Page - NXP Semiconductors PEMB13 Datasheet HTML 7Page - NXP Semiconductors PEMB13 Datasheet HTML 8Page - NXP Semiconductors  
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2004 Apr 15
3
Philips Semiconductors
Product specification
PNP/PNP resistor-equipped transistors;
R1 = 4.7 k
Ω, R2 = 47 kΩ
PEMB13; PUMB13
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PEMB13
plastic surface mounted package; 6 leads
SOT666
PUMB13
plastic surface mounted package; 6 leads
SOT363
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base
−−50
V
VEBO
emitter-base voltage
open collector
−−10
V
VI
input voltage
positive
+5
V
negative
−−30
V
IO
output current (DC)
−−100
mA
ICM
peak collector current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
note 1
200
mW
SOT666
notes 1 and 2
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
note 1
300
mW
SOT666
notes 1 and 2
300
mW



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