PJM3422NSA datasheet(2/7 Pages) PJSEMI

2 / 7 page

PJM3422NSA

N- Enhancement Mode Field Effect Transistor

www.pingjingsemi.com

2 / 7

Revison：1.0 Apr-2019

Electrical Characteristics (TA=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 10mA

Drain to Source Leakage Current

IDSS

VDS = 44 V, VGS = 0 V

μA

Gate-Body Leakage Current

IGSS

VGS =

±12 V, VDS = 0 V

±100

Gate Threshold Voltage Note2

VGS(th)

VDS = VGS, ID = 250

μA

0.6

1.3

Drain-Source on-Resistance Note2

RDS(ON)

VGS = 4.5 V, ID = 2.1 A

125

160

mΩ

VGS = 2.5 V, ID = 1.5 A

157

200

mΩ

Forward Transconductance Note2

gFS

VDS = 5 V, ID = 2.1 A

Dynamic Characteristics

Input Capacitance

Ciss

VDS = 25 V, VGS= 0V, f = 1MHZ

214

300

Output Capacitance

Goss

Reverse Transfer Capacitance

Crss

12.6

Switching Characteristics

Turn -On Delay Time

Td(on)

VGS = 10 V,

VDD = 27.5V,

ID = 2.1A, RGEN = 3Ω

2.3

Turn-On Rise Time

2.4

Turn-Off Delay Time

Td(off)

16.5

Turn-Off Fall Time

Source-Drain Diode characteristics

Diode Forward Voltage

VSD

IS= 1A

0.78

Maximum Body-Diode

Continuous Current

Notes:

1.Surface mounted on FR4 board，t ≤ 10 sec.

2.Pulse test: pulse width ≤300μs,duty cycle≤2%.

PJM3422NSA データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3422NSA データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4 5 6 7

データシートダウンロード