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2SC4501 データシート(PDF) 2 Page - Hitachi Semiconductor

部品番号 2SC4501
部品情報  Silicon NPN Epitaxial
PDF  5 Pages
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メーカー  HITACHI [Hitachi Semiconductor]
ホームページ  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4501 データシート(HTML) 2 Page - Hitachi Semiconductor

  2SC4501 Datasheet HTML 1Page - Hitachi Semiconductor 2SC4501 Datasheet HTML 2Page - Hitachi Semiconductor 2SC4501 Datasheet HTML 3Page - Hitachi Semiconductor 2SC4501 Datasheet HTML 4Page - Hitachi Semiconductor 2SC4501 Datasheet HTML 5Page - Hitachi Semiconductor  
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2SC4501(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
3A
Collector peak current
I
C (peak)
4A
Collector power dissipation
P
C*
1
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C = 1 mA, RBE = _
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 0.1 mA, IC = 0
Collector cutoff current
I
CEO
——20
µA
V
CB = 24 V, RBE = _
DC current transfer ratio
h
FE
2000
—
50000
V
CE = 3 V, IC = 1.5 A*
1
Collector to emitter saturation
voltage
V
CE (sat)
—
—
1.5
V
I
C = 1.5 A, IB = 3 mA*
1
V
CE (sat)
—
—
2.0
I
C = 3 A, IB = 30 mA*
1
Base to emitter saturation
voltage
V
BE (sat)
—
—
2.0
V
I
C = 1.5 A, IB = 3 mA*
1
V
BE (sat)
—
—
3.5
I
C = 3 A, IB = 30 mA*
1
Turn on time
t
on
—
0.4
—
µs
I
C = 1.5 A,
Turn off time
t
off
—
1.2
—
µs
I
B1 = –IB2 = 3 mA,
Storage time
t
stg
—
0.8
—
µs
V
CC = 30 V
Note:
1. Pulse test.



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