PRELIMINARY

Rev. 3.0

- 4 -

July 2004

PRELIMINARY

K6R1004V1D

CMOS SRAM

for AT&T

≤ 8ns) for I ≤ 20mA.

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

3.0

3.3

3.6

V

Ground

00

0

V

Input High Voltage

2.0

-

V

Input Low Voltage

-0.3*

-

0.8

V

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

TYP

Max

Unit

Input/Output Capacitance

-

8

pF

Input Capacitance

-

6

pF

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

-0.5 to 4.6

V

-0.5 to 4.6

V

Power Dissipation

1W

Storage Temperature

-65 to 150

°C

Operating Temperature

Commercial

0 to 70

°C

Industrial

-40 to 85

°C

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

-2

2

µA

Output Leakage Current

-2

2

µA

Operating Current

Min. Cycle, 100% Duty

Com.

8ns

-

80

mA

10ns

-

65

Ind.

8ns

-

90

10ns

-

75

Standby Current

-20

mA

f=0MHz, CS

-5

Output Low Voltage Level

-

0.4

V

Output High Voltage Level

2.4

-

V