TIP36AB datasheet(1/2 Pages) ISC

部品番号	TIP36AB

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistor

TIP36AB

DESCRIPTION

·

DC Current Gain-

: hFE= 25(Min)@IC = -1.5A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-25

A

ICM

Collector Current-peak

-40

A

IB

Base Current

-5

A

PC

Collector Power Dissipation@TC=25℃

100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.25

℃

/W

同様の部品番号 - TIP36AB

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	TIP36A	154Kb / 3P	POWER TRANSISTORS(25A,40-100V,125W)
Motorola, Inc	TIP36A	157Kb / 6P	COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP36A	157Kb / 6P	COMPLEMENTARY SILICON POWER TRANSISTORS 1996 REV 1
Power Innovations Ltd	TIP36A	93Kb / 6P	PNP SILICON POWER TRANSISTORS
Savantic, Inc.	TIP36A	170Kb / 4P	Silicon PNP Power Transistors

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