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TPD1024AS データシート(PDF) 3 Page - Toshiba Semiconductor

部品番号 TPD1024AS
部品情報  Low-Side Power Switch for Motors, Solenoids, and Lamp Drivers
PDF  7 Pages
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD1024AS データシート(HTML) 3 Page - Toshiba Semiconductor

  TPD1024AS Datasheet HTML 1Page - Toshiba Semiconductor TPD1024AS Datasheet HTML 2Page - Toshiba Semiconductor TPD1024AS Datasheet HTML 3Page - Toshiba Semiconductor TPD1024AS Datasheet HTML 4Page - Toshiba Semiconductor TPD1024AS Datasheet HTML 5Page - Toshiba Semiconductor TPD1024AS Datasheet HTML 6Page - Toshiba Semiconductor TPD1024AS Datasheet HTML 7Page - Toshiba Semiconductor  
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TPD1024AS
2002-10-24
3
Maximum Ratings (Ta = 25°C )
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS (DC)
40
V
Output current
ID
1.5
A
Input voltage
VGS
− 0.5 to 6
V
Power dissipation
PD
1.2
W
Operating temperature
Topr
− 40 to 85
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
− 55 to 150
°C
Recommendable Condition
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Input voltage
VIN
―
4.5
5
6
V
Electrical Characteristics (Tj = 25°C)
Characteristic
Symbol
Test
Cir-
cuit
Test Condition
Min
Typ.
Max
Unit
Drain-source breakdown voltage
V (BR) DSS
―
VGS = 0, ID = 10 mA
40
―
―
V
Operating supply voltage
VDD (OPR)
―
―
―
―
18
V
IDSS (1)
―
VGS = 0, VDS = 40 V
―
―
3
mA
Current at output off
IDSS (2)
―
VGS = 0, VDS = 24 V
―
―
100
µA
Input threshold voltage
Vth
―
VGS = 10 V, ID = 1 mA
0.8
―
2.5
V
Input current
IGSS
―
VGS = 5 V,
at normal operation
―
―
300
µA
On resistance
RDS (ON)
―
VGS = 5 V, ID = 1 A
―
―
0.5
Ω
Thermal shutdown temperature
TS
―
―
―
160
―
°C
Overcurrent protection
IS
―
VDS = 12 V, VGS = 5 V
―
3.5
―
A
tON
―
50
―
µs
Switching time
tOFF
1
VDS = 12 V, VGS = 5 V,
RL = 12Ω
―
10
―
µs
Diode forward voltage
Between drain and source
VDSF
―
IF = 1.5 A
―
0.9
1.8
V
Avalanche energy
EA
―
L = 10 mH, Single pulse
30
―
―
mJ
Test Circuit 1
Switching Time



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