DF2B6M4ASL datasheet(2/9 Pages) TOSHIBA

部品番号	DF2B6M4ASL

部品情報	ESD Protection Diodes Silicon Epitaxial Planar

PDF	9 Pages

Scroll/Zoom	100%

メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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DF2B6M4ASL

5. Example of Circuit Diagram

Example of Circuit Diagram

6. Quick Reference Data

Quick Reference Data

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Symbol

VRWM

RDYN

VESD

Note

(Note 1)

(Note 2)

(Note 3)

Test Condition



VR = 0 V, f = 1 MHz



Min



Typ.



0.15

0.7



Max

5.5

0.2



Unit

Ω

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.

Note 3: Criterion: No damage to devices.

2019-08-05

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

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