2004 Apr 21

4

Philips Semiconductors

Product specification

NPN/PNP resistor-equipped transistors;

R1 = 22 k

Ω, R2 = 22 kΩ

PEMD2; PIMD2; PUMD2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

10

V

input voltage TR1

positive

−

+40

V

negative

−−10

V

input voltage TR2

positive

−

+10

V

negative

−−40

V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

SOT363

note 1

−

200

mW

SOT457

note 1

−

300

mW

SOT666

notes 1 and 2

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

SOT363

note 1

−

300

mW

SOT457

note 1

−

600

mW

SOT666

notes 1 and 2

−

300

mW