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データシートサーチシステム |
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データシートサーチシステム |
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IXTP14N60P データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP14N60P データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTP14N60P · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V · Fully characterized avalanche voltage and current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · DC/DC Converter · Switch-Mode and Resonant-Mode Power Supplies · Uninterrupted Power Supplies · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pulsed 42 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 0.42 ℃ /W |
同様の部品番号 - IXTP14N60P |
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同様の説明 - IXTP14N60P |
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