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2SC5926 データシート(PDF) 1 Page - Panasonic Semiconductor |
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2SC5926 データシート(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() Power Transistors 1 Publication date: November 2004 SJD00326AED 2SC5926 Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio h FE which has satisfactory linearity. • Low collector-emitter saturation voltage V CE(sat) • Allowing supply with the radial taping ■ Absolute Maximum Ratings T C = 25°C ■ Electrical Characteristics T C = 25°C ± 3°C Unit: mm Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 60 V Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, I B = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA Forward current transfer ratio * 1 hFE1 * 2 VCE = 4 V, IC = 0.5 A 500 2 300 hFE2 VCE = 4 V, I C = 3 A 100 Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 20 mA 0.7 V Turn-on time ton IC = 1 A, Resistance loaded 0.2 µs Storage time tstg IB1 = 0.1 A, I B2 = − 0.1 A 1.5 µs Fall time tf VCC = 50 V 0.1 µs Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6V Collector current IC 3A Peak collector current ICP 6A Collector power dissipation PC 15 W Ta = 25°C 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q P hFE1 500 to 1 500 1 300 to 2 300 10.0±0.2 0.65±0.1 0.35±0.1 2.5±0.2 123 0.65±0.1 1.2±0.1 1.48±0.2 2.25±0.2 C 1.0 0.55±0.1 0.55±0.1 2.5±0.2 1.05±0.1 5.0±0.1 1.0 ±0.2 1: Base 2: Collector 3: Emitter MT-4-A1 Package Note) *: Non-repetitive peak collector current Internal Connection B C E |
同様の部品番号 - 2SC5926 |
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同様の説明 - 2SC5926 |
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